* rDS(ON) = 5.3mΩ , VGS = 10V, ID = 40A
* rDS(ON) = 6.6mΩ , VGS = 4.5V, ID = 40A
* High performance trench technology for extremely low rDS(ON)
* Low gate.

* DC/DC converters
* High power and current handling capability DRAIN (FLANGE) D SOURCE DRAIN GATE G S TO-2.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using www.DataSheet4U.com either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) .

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