FDP8878 mosfet equivalent, n-channel mosfet.
* rDS(ON) = 15mΩ, VGS = 10V, ID = 40A
* rDS(ON) = 19mΩ, VGS = 4.5V, ID = 36A
* High performance trench technology for extremely low rDS(ON)
* Low gate cha.
This N-Channel MOSFET has been designed specifically to
Features
* rDS(ON) = 15mΩ, VGS = 10V, ID = 40A
* rDS(ON) = 19mΩ, VGS = 4.5V, ID = 36A
* High performance trench technology for extremely low rDS(ON)
* Low gate charge
* Hig.
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