FDP8876 Datasheet, Fairchild Semiconductor

* rDS(ON) = 8.5mΩ, VGS = 10V, ID = 40A
* rDS(ON) = 10.3mΩ, VGS = 4.5V, ID = 40A
* High performance trench technology for extremely low rDS(ON)
* Low gate .

This N-Channel MOSFET has been designed specifically to Features
* rDS(ON) = 8.5mΩ, VGS = 10V, ID = 40A
* rDS(ON) = 10.3mΩ, VGS = 4.5V, ID = 40A
* High performance trench technology for extremely low rDS(ON)
* Low gate charge
* .