FDP8896 Datasheet, Fairchild Semiconductor

* rDS(ON) = 5.9mΩ, VGS = 10V, ID = 35A
* rDS(ON) = 7.0mΩ, VGS = 4.5V, ID = 35A
* High performance trench technology for extremely low rDS(ON)
* Low gate c.

* DC/DC converters tmM Features
* rDS(ON) = 5.9mΩ, VGS = 10V, ID = 35A
* rDS(ON) = 7.0mΩ, VGS = 4.5V, ID = .

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching s.