* rDS(ON) = 4.1mΩ, VGS = 10V, ID = 35A
* rDS(ON) = 4.6mΩ, VGS = 4.5V, ID = 35A
* High performance trench technology for extremely low rDS(ON)
* Low gate c.

* DC/DC converters Features
* rDS(ON) = 4.1mΩ, VGS = 10V, ID = 35A
* rDS(ON) = 4.6mΩ, VGS = 4.5V, ID = 35A .

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching s.

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