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Fairchild Semiconductor Electronic Components Datasheet

FDP8030L Datasheet

N-Channel Logic Level PowerTrench MOSFET

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November 1999
FDP8030L/FDB8030L
N-Channel Logic Level PowerTrenchMOSFET
General Description
This N-Channel Logic level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETS feature faster switching and lower
gate charge than other MOSFETS with comparable
RDS(on) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
80 A, 30 V.
RDS(ON) = 0.0035 @ VGS = 10 V
RDS(ON) = 0.0045 @ VGS = 4.5 V
Critical DC electrical parameters specified at
elevated temperature
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient
suppressor
High performance trench technology for extremely
low RDS(ON)
175°C maximum junction temperature rating
DD
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
PD
TJ, TSTG
TL
Total Power Dissipation @# TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Ratings
30
±20
80
300
187
1.25
-65 to +175
275
0.8
62.5
S
Units
V
V
A
W
W°C
°C
°C
°C/W
°C/W
1999 Fairchild Semiconductor Corporation
FDP8030L Rev C(W)


Fairchild Semiconductor Electronic Components Datasheet

FDP8030L Datasheet

N-Channel Logic Level PowerTrench MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 20 V,
IAR Maximum Drain-Source Avalanche
Current
ID = 80 A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V,
VGS = 20 V,
VGS = –20 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V,
VGS = 4.5 V,
VGS = 10 V,
VDS = 10 V,
ID = 80 A
TJ=125°C
ID = 70 A
VDS = 10 V
ID = 80 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
tD(on)
Turn–On Delay Time
tr Turn–On Rise Time
tD (off)
Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 15 V,
VGS = 4.5 V,
RGS = 10
ID = 50 A,
RGEN = 10
VDS = 15 V,
ID = 80 A, VGS = 5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current (Note 1)
ISM
Maximum Pulsed Drain-Source Diode Forward Current
(Note 1)
VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 80 A (Note 1)
Notes:
1500
80
mJ
A
30 V
23 mV/°C
10
100
–100
µA
nA
nA
1 1.5 2
V
–5 mV/°C
3.1 3.5
4.0 5.6
3.6 4.5
60
170
m
A
S
10500
2700
1650
pF
pF
pF
20 35
185 225
160 200
200 240
120 170
27
48
ns
ns
ns
ns
nC
nC
nC
80
300
1 1.3
A
A
V
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDP8030L Rev C(W)


Part Number FDP8030L
Description N-Channel Logic Level PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 10 Pages
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