FDP8030L
Description
Features
This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETS feature faster switching and lower gate charge than other MOSFETS with parable RDS(on) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
- 80 A, 30 V.
RDS(ON) = 0.0035 Ω @ VGS = 10 V RDS(ON) = 0.0045 Ω @ VGS = 4.5 V
- Critical DC electrical parameters specified at elevated temperature
- Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
- High performance trench technology for extremely low RDS(ON)
- 175°C maximum junction temperature rating
TO-220
TO-263AB
FDP Series
FDB Series
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol
VDSS VGSS...
