onsemi FDP8030L
This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications.| Part No. | FDP8030L |
|---|---|
| Datasheet | FDP8030L Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.● 80 A, 30 V. RDS(ON) = 0.0035 Ω @ VGS = 10 V RDS(ON) = 0.0045 Ω @ VGS = 4.5 V
● Critical DC electrical parameters specified at elevated temperature
● Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
● High performance trench technology for extremely low RDS(ON)
● 175°C maximum junction temperature rating D D G D S G G TO-220 S TO-263AB FDP Series FDB Series
ABSOLUTE MAXIMUM RATINGS
TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1) (Note 1) PD TJ, TSTG TL Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics...
