FDMC8360L mosfet equivalent, n-channel shielded gate power trench mosfet.
* Shielded Gate MOSFET Technology
* Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A
* Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A
* High performance tech.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
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