FDMC8321L mosfet equivalent, n-channel power trench mosfet.
* Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 22 A
* Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 18 A
* Advanced Package and Silicon combination for low rDS(on)
an.
* Synchronous rectifier
* Load switch/Orring
* Motor switch
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S Pin 1 S S G
S S
D D
D D D D
P.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convertional switching PWM contollers. It has been optimized for low gate charg.
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