FDMC8321L Key Features
- Max RDS(on) = 2.5 mW at VGS = 10 V, ID = 22 A
- Advanced Package and Silicon bination for Low RDS(on)
- Next Generation Enhanced Body Diode Technology, Engineered
- 100% UIL Tested
- Pb-Free, Halide Free and RoHS pliant
- Part: FDMC8321L
- Description: N-Channel MOSFET
- Manufacturer: onsemi
- Size: 485.54 KB
Other FDMC8321L Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild Semiconductor |
FDMC8321L | N-Channel Power Trench MOSFET |
|
Fairchild Semiconductor |
FDMC8321LDC | MOSFET |