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FDMC8321L - N-Channel MOSFET

Description

This N

improve the overall efficiency and to minimize switch mode ringing of DC/DC converters using either synchronous or conventional switching PWM contollers.

Features

  • Max RDS(on) = 2.5 mW at VGS = 10 V, ID = 22 A Max RDS(on) = 4.1 mW at VGS = 4.5 V, ID = 18 A.
  • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
  • Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery.
  • 100% UIL Tested.
  • Pb.
  • Free, Halide Free and RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDMC8321L
Manufacturer onsemi
File Size 485.54 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC8321L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 40 V, 49 A, 2.5 mW FDMC8321L General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch mode ringing of DC/DC converters using either synchronous or conventional switching PWM contollers. It has been optimized for low gate charge, low RDS(on), fast switching speed body diode reverse recovery performance. Features • Max RDS(on) = 2.5 mW at VGS = 10 V, ID = 22 A Max RDS(on) = 4.1 mW at VGS = 4.
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