FDMC8321L datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Max RDS(on) = 2.5 mW at VGS = 10 V, ID = 22 A Max RDS(on) = 4.1 mW at VGS = 4.5 V, ID = 18 A
* Advanced Package and Silicon Combination for Low RDS(on) and High.

Application

* Synchronous Rectifier
* Load Switch / Orring
* Motor Switch MOSFET MAXIMUM RATINGS (TA = 25°C unless othe.

Description

This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch mode ringing of DC/DC converters using either synchronous or conventional switching PWM contollers. It has been optimized for low gate charg.

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