FDMC8327L - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMC8327L
Manufacturer	Fairchild Semiconductor
File Size	297.44 KB
Description	MOSFET
Datasheet	FDMC8327L Datasheet
Additional preview pages of the FDMC8327L datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DC-DC Conversion Top Bottom 8765 DD D D S D S D S D G D 1 234 GS S S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Curren

Features

Max rDS(on) = 9.7 mΩ at VGS = 10 V, ID = 12 A.
Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 10 A.
Low Profile - 0.8mm max in Power 33.
100% UIL test.
RoHS Compliant General.

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Published: Jan 12, 2014 |