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FDMC8030 - Dual N-Channel MOSFET

General Description

This device includes two 40 V N

Power 33 (3 mm x 3 mm MLP) package.

The package is enhanced for exceptional thermal performance.

Key Features

  • Max rDS(on) = 10 mW at VGS = 10 V, ID = 12 A.
  • Max rDS(on) = 14 mW at VGS = 4.5 V, ID = 10 A.
  • Max rDS(on) = 28 mW at VGS = 3.2 V, ID = 4 A.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet Details

Part number FDMC8030
Manufacturer onsemi
File Size 265.88 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMC8030 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual N-Channel, POWERTRENCH) 40 V, 12 A, 10 mW FDMC8030 General Description This device includes two 40 V N−Channel MOSFETs in a dual Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for exceptional thermal performance. Features • Max rDS(on) = 10 mW at VGS = 10 V, ID = 12 A • Max rDS(on) = 14 mW at VGS = 4.5 V, ID = 10 A • Max rDS(on) = 28 mW at VGS = 3.