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FDMC8010DC - N-Channel Dual Cool 33 PowerTrench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.

Key Features

  • Dual CoolTM Top Side Cooling PQFN package.
  • Max rDS(on) = 1.28 mΩ at VGS = 10 V, ID = 37 A.
  • Max rDS(on) = 1.74 mΩ at VGS = 4.5 V, ID = 32 A.
  • High Performance Technology for Extremely Low rDS(on).
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC8010DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET August 2016 FDMC8010DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET 30 V, 157 A, 1.28 mΩ Features „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 1.28 mΩ at VGS = 10 V, ID = 37 A „ Max rDS(on) = 1.74 mΩ at VGS = 4.5 V, ID = 32 A „ High Performance Technology for Extremely Low rDS(on) „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.