Datasheet4U Logo Datasheet4U.com

FDMC8030 - Dual N-Channel Power MOSFET

General Description

This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package.

The package is enhanced for exceptional thermal performance.

Battery Protection Load Switching Point of Load Pin 1 G1 S1 S1 S1 G2 D1 D2 S2 S2 Bottom Drain2 Cont

Key Features

  • Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A.
  • Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A.
  • Max rDS(on) = 28 mΩ at VGS = 3.2 V, ID = 4 A.
  • Termination is Lead-free and RoHS Compliant General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMC8030 Dual N-Channel MOSFET ON Semiconductor
FDMC8032L Dual N-Channel MOSFET On Semiconductor
FDMC8010 N-Channel MOSFET ON Semiconductor
FDMC8010DC N-Channel MOSFET ON Semiconductor
FDMC8010ET30 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDMC8032L MOSFET
FDMC8010 N-Channel PowerTrench MOSFET
FDMC8010DC N-Channel Dual Cool 33 PowerTrench MOSFET
FDMC8010ET30 MOSFET
FDMC8015L MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMC8030 Dual N-Channel Power Trench® MOSFET August 2011 FDMC8030 Dual N-Channel Power Trench® MOSFET 40 V, 12 A, 10 mΩ Features „ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A „ Max rDS(on) = 28 mΩ at VGS = 3.2 V, ID = 4 A „ Termination is Lead-free and RoHS Compliant General Description This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.