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FDMC8032L - MOSFET

General Description

Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6 A Low Inductance Packaging Shortens Rise/Fall Times Lower Switching Losses 100% Rg Tested Termination is Lead-free and RoHS Compliant This device inclu

Key Features

  • General.

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FDMC8032L Dual N-Channel PowerTrench® MOSFET October 2013 FDMC8032L Dual N-Channel PowerTrench® MOSFET 40 V, 7 A, 20 mΩ Features General Description „ Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6 A „ Low Inductance Packaging Shortens Rise/Fall Times „ Lower Switching Losses „ 100% Rg Tested „ Termination is Lead-free and RoHS Compliant This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.