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FDMC8015L - MOSFET

General Description

Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® proc

Key Features

  • General.

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FDMC8015L N-Channel PowerTrench® MOSFETTM FDMC8015L N-Channel Power Trench® MOSFET 40 V, 18 A, 26 mΩ October 2013 Features General Description „ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications „ Load Switch „ Motor Bridge Switch Top 8765 Bottom DD D D 1 234 GS S S MLP 3.3x3.