FDMC8327L mosfet equivalent, n-channel mosfet.
* Max RDS(on) = 9.7 mW at VGS = 10 V, ID = 12 A
* Max RDS(on) = 12.5 mW at VGS = 4.5 V, ID = 10 A
* Low Profile − 0.8 mm Max in Power 33
* 100% UIL Test <.
* DC−DC Conversion
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDS .
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
* Max RDS(on) = 9.7 mW at VGS = 10 V, ID.
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