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FDMC8327L - N-Channel MOSFET

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Features

  • Max RDS(on) = 9.7 mW at VGS = 10 V, ID = 12 A.
  • Max RDS(on) = 12.5 mW at VGS = 4.5 V, ID = 10 A.
  • Low Profile.
  • 0.8 mm Max in Power 33.
  • 100% UIL Test.
  • This Device is Pb.
  • Free, Halide Free and RoHS Compliant.

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Datasheet Details

Part number FDMC8327L
Manufacturer onsemi
File Size 414.55 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC8327L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 40 V, 14 A, 9.7 mW FDMC8327L General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max RDS(on) = 9.7 mW at VGS = 10 V, ID = 12 A • Max RDS(on) = 12.5 mW at VGS = 4.5 V, ID = 10 A • Low Profile − 0.
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