FDMC8360L datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Shielded Gate MOSFET Technology
* Max RDS(on) = 2.1 mW at VGS = 10 V, ID = 27 A
* Max RDS(on) = 3.1 mW at VGS = 4.5 V, ID = 22 A
* High Performance Tech.

Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features
* Shi.

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