FDMC8360L
Description
This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance and yet maintain superior switching performance.
Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 2.1 m W at VGS = 10 V, ID = 27 A
- Max RDS(on) = 3.1 m W at VGS = 4.5 V, ID = 22 A
- High Performance Technology for Extremely Low RDS(on)
- Termination is Lead- Free
- 100% UIL Tested
- This Device is Pb- Free, Halide Free and is Ro HS pliant
Application
- DC- DC Conversion
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Units
VDS Drain to Source Voltage
VGS Gate to Source Voltage
±20
Drain Current
- Continuous TC = 25°C
- Continuous TA = 25°C (Note 1a)
- Pulsed
(Note 4)
EAS Single Pulse Avalanche Energy (Note 3)
294 m J
PD Power Dissipation TC = 25°C
Power Dissipation TA = 25°C (Note 1a)
TJ, TSTG...
