FDMC8360L Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
FDMC8360L Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 2.1 mW at VGS = 10 V, ID = 27 A
- Max RDS(on) = 3.1 mW at VGS = 4.5 V, ID = 22 A
- High Performance Technology for Extremely Low RDS(on)
- Termination is Lead-Free
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and is RoHS pliant
- DC-DC Conversion
- Continuous TC = 25°C
- Continuous TA = 25°C (Note 1a)