FDMC8327L datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* Max rDS(on) = 9.7 mΩ at VGS = 10 V, ID = 12 A
* Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 10 A
* Low Profile - 0.8mm max in Power 33
* 100% UIL test

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application
* DC-DC Conversion.

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