Datasheet4U Logo Datasheet4U.com

FDMC7582 - MOSFET

General Description

Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 16.7 A Max rDS(on) = 7.5 mΩ at VGS = 4.5 V, ID = 13.6 A State-of-the-art switching performance Lower output capacitance, gate resistance, and gate charge boost efficiency Shielded gate technology reduces swit

Key Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMC7570S N-Channel MOSFET ON Semiconductor
FDMC7200 Dual N-Channel MOSFET ON Semiconductor
FDMC7200S Dual N-Channel MOSFET ON Semiconductor
FDMC7208S Dual N-Channel MOSFET ON Semiconductor
FDMC7660 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDMC7570S N-Channel Power Trench SyncFET
FDMC7572S MOSFET
FDMC7200 Dual N-Channel PowerTrench MOSFETs
FDMC7200S Dual N-Channel PowerTrench MOSFETs
FDMC7208S Dual N-Channel PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMC7582 N-Channel PowerTrench® MOSFET FDMC7582 N-Channel PowerTrench® MOSFET 25 V, 49 A, 5.0 mΩ April 2012 Features General Description „ Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 16.7 A „ Max rDS(on) = 7.5 mΩ at VGS = 4.5 V, ID = 13.6 A „ State-of-the-art switching performance „ Lower output capacitance, gate resistance, and gate charge boost efficiency „ Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.