FDMC7200S Datasheet | Fairchild Semiconductor

FDMC7200S Dual N-Channel PowerTrench® MOSFETs FDMC7200S June 2014 Dual N-Channel PowerTrench® MOSFETs 30 V, 22 mΩ, 10 mΩ Features Q1: N-Channel - Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 6 A - Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel - Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A - Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A - RoHS pliant General Description This device includes two specialized N-Channel MOSFETs in a dual power33 (3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency. Applications - Mobile puting - Mobile Internet Devices - General Purpose Point of Load Pin 1 Bottom D1 D1 D1 G1 D1 D2/S1 S2 S2 S2 G2 Bottom VIN VIN GHSVIN VIN SWITCH NODE GND GND GND GLS...