FDMC7660 Datasheet Text
MOSFET
- N-Channel, POWERTRENCH)
30 V, 20 A, 2.2 mW
FDMC7660
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 20 A
- Max rDS(on) = 3.3 mW at VGS = 4.5 V, ID = 18 A
- High Performance Technology for Extremely Low rDS(on)
- This Device is Pb- Free, Halide Free and is RoHS pliant
Applications
- DC
- DC Buck Converters
- Point of Load
- High Efficiency Load Switch and Low Side Switching
MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
30
V
VGS Gate to Source Voltage (Note 4)
±20
V
ID Drain Current
A
- Continuous (Package Limited) TC = 25°C
40...
