FDMC7660 Datasheet Text
FDMC7660 N-Channel PowerTrench® MOSFET
June 2012
FDMC7660
N-Channel PowerTrench® MOSFET
30 V, 20 A, 2.2 mΩ
Features
General Description
- Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A
- Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free and RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Applications
- DC
- DC Buck Converters
- Point of Load
- High Efficiency Load Switch and Low Side Switching
Top Bottom
S Pin 1 S S G
S S
D D
D D D D
Power 33
S G
D D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter...
