FDMC7660S Datasheet Text
MOSFET
- N-Channel, POWERTRENCH), SyncFETt
30 V, 20 A, 2.2 mW
FDMC7660S
General Description The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Features
- Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 20 A
- Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 18 A
- High Performance Technology for Extremely Low rDS(on)
- This Device is Pb- Free, Halide Free and is RoHS pliant
Applications
- Synchronous Rectifier for DC/DC Converters
- Notebook Vcore/GPU Low Side Switch
- Networking Point of Load Low Side Switch
- Tele Secondary Side Rectification
MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
30
V
VGS Gate to Source Voltage (Note 4)
±20
V
ID Drain Current
A
- Continuous (Package Limited) TC = 25°C
40
- Continuous (Silicon Limited) TC = 25°C...
