FDMC7660S Datasheet | Fairchild Semiconductor

FDMC7660S N-Channel Power Trench® SyncFET™ January 2014 FDMC7660S N-Channel Power Trench® SyncFET™ 30 V, 20 A, 2.2 mΩ Features - Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A - Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 18 A - High performance technology for extremely low rDS(on) - Termination is Lead-free and RoHS pliant General Description The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications - Synchronous Rectifier for DC/DC Converters - Notebook Vcore/GPU low side switch - Networking Point of Load low side switch - Tele secondary side rectification Pin 1 S S S G D D D D Top Power 33 Bottom D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter...