FDMC7570S Datasheet | Fairchild Semiconductor

FDMC7570S N-Channel Power Trench® SyncFETTM .. December 2009 FDMC7570S N-Channel Power Trench® SyncFETTM 25 V, 40 A, 2 mΩ Features General Description The FDMC7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. - Max rDS(on) = 2 mΩ at VGS = 10 V, ID = 27 A - Max rDS(on) = 2.9 mΩ at VGS = 4.5 V, ID = 21.5 A - Advanced Package and bination for low rDS(on) and high efficiency - SyncFET Schottky Body Diode - 100% UIL Tested - RoHS pliant Applications - Synchronous Rectifier for DC/DC Converters - Notebook Vcore/ GPU low side switch - Networking Point of Load low side switch - Tele secondary side rectification Top Bottom S Pin 1 S S D G 5 6 7 8 4 G 3 2 1 D D S S S D D D...