FDMC7200 Datasheet | Fairchild Semiconductor

FDMC7200 Dual N-Channel PowerTrench® MOSFET FDMC7200 June 2009 Dual N-Channel PowerTrench® MOSFET 30 V, 12 mΩ and 23.5 mΩ Features General Description Q1: N-Channel - Max rDS(on) = 23.5 mΩ at VGS = 10 V, ID = 6 A - Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel - Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 8 A - Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7 A - RoHS pliant This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency. Applications - Mobile puting - Mobile Internet Devices - General Purpose Point of Load Pin 1 D1 D1 D1 G1 D1 D2/S1 S2 S2 S2 G2 VIN VIN VIN GHS VIN SWITCH NODE GND GND GND GLS BOTTOM...