FDMC7572S Datasheet Text
FDMC7572S N-Channel Power Trench® SyncFETTM
August 2011
FDMC7572S
N-Channel Power Trench® SyncFETTM
25 V, 40 A, 3.15 mΩ
Features
General Description
- Max rDS(on) = 3.15 mΩ at VGS = 10 V, ID = 22.5 A
- Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- SyncFET Schottky Body Diode
- 100% UIL Tested
- RoHS pliant
The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Applications
- Synchronous Rectifier for DC/DC Converters
- Notebook Vcore/ GPU low side switch
- Networking Point of Load low side switch
- Tele secondary side rectification
Top Bottom
S Pin 1 S S G
D5 D6
4G 3S
D D D D
Power 33
MOSFET Maximum Ratings TA...