FDMC7582 Datasheet | Fairchild Semiconductor

FDMC7582 N-Channel PowerTrench® MOSFET FDMC7582 N-Channel PowerTrench® MOSFET 25 V, 49 A, 5.0 mΩ April 2012 Features General Description - Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 16.7 A - Max rDS(on) = 7.5 mΩ at VGS = 4.5 V, ID = 13.6 A - State-of-the-art switching performance - Lower output capacitance, gate resistance, and gate charge boost efficiency - Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.. Application - High side switching for high end puting - Clip bonding technology further reduces On resistance and source inductance - RoHS pliant - High power density DC-DC...