Datasheet4U Logo Datasheet4U.com

CGHV40100 Datasheet GaN HEMT

Manufacturer: Cree (now Wolfspeed)

Overview

CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40100 ideal for linear and compressed amplifier circuits.

Key Features

  • Up to 3 GHz Operation.
  • 100 W Typical Output Power.
  • 17.5 dB Small Signal Gain at 2.0 GHz.