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CGHV40100 Datasheet Preview

CGHV40100 Datasheet

GaN HEMT

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CGHV40100
100 W, DC - 3.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGHV40100, operating from a 50 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGHV40100 ideal for linear and
compressed amplifier circuits. The transistor is available in a 2-lead flange
and pill package.
PPNac: CkaGgHeVT4y0p1e0s0: F44&0C19G3H&V4404100200P6
Typical Performance Over 500 MHz - 2.5 GHz (TC = 25˚C), 50 V
Parameter
500 MHz
1.0 GHz
1.5 GHz
Small Signal Gain
17.6
16.9
17.7
Saturated Output Power
147 100 141
Drain Efficiency @ PSAT
68 56
Input Return Loss
6 5.1
Note:
Measured CW in the CGHV40100F-AMP application circuit.
58
10.5
2.0 GHz
17.5
116
54
5.5
2.5 GHz
14.8
112
54
8.8
Units
dB
W
%
dB
Features
• Up to 3 GHz Operation
• 100 W Typical Output Power
17.5 dB Small Signal Gain at 2.0 GHz
Application Circuit for 0.5 - 2.5 GHz
55% Efficiency at PSAT
• 50 V Operation
Large Signal Models Available for ADS & MWO
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV40100 Datasheet Preview

CGHV40100 Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
150
-10, +2
-65, +150
225
20.8
8.7
245
40
Thermal Resistance, Junction to Case3
RθJC
1.62
Thermal Resistance, Junction to Case4
RθJC
1.72
Case Operating Temperature5
TC -40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGHV40100P at PDISS = 83 W.
4 Measured for the CGHV40100F at PDISS = 83 W.
5 See also, Power Derating Curve on Page 5.
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
85˚C
Characteristics
DC Characteristics1
Symbol Min.
Typ.
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
Gate Quiescent Voltage
VGS(Q)
-2.7
Saturated Drain Current2
IDS
13.5
19.3
Drain-Source Breakdown Voltage
VBR 125
RF Characteristics3 (TC = 25˚C, F0 = 2.0 GHz unless otherwise noted)
Small Signal Gain
GSS 16 17.5
Power Gain
GP – 11.0
Output Power at Saturation4
PSAT 50 116
Drain Efficiency
η 47 54
Output Mismatch Stress
VSWR
Dynamic Characteristics5
Input Capacitance
CGS
Output Capacitance
CDS
Feedback Capacitance
CGD
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV40100-AMP
4 PSAT is defined as IG = 0.208 mA.
5 Includes package
29.3
7.3
0.61
Max.
-2.3
10 : 1
Units Conditions
VDC VDS = 10 V, ID = 20.8 mA
VDC VDS = 50 V, ID = 0.6 A
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 20.8 mA
dB VDD = 50 V, IDQ = 0.6 A
dB VDD = 50 V, IDQ = 0.6 A, POUT = PSAT
W VDD = 50 V, IDQ = 0.6 A
% VDD = 50 V, IDQ = 0.6 A, POUT = PSAT
Y No damage at all phase angles, VDD = 50 V, IDQ = 0.6 A, POUT = 100 W CW
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Copyright © 2014-2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV40100 Rev 3.5
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
rfsales@cree.com
www.cree.com/rf


Part Number CGHV40100
Description GaN HEMT
Maker Cree
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