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CGHV40180F Datasheet Preview

CGHV40180F Datasheet

GaN HEMT

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CGHV40180F
180 W, DC - 2000 MHz, 50 V, GaN HEMT
Cree’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGHV40180F ideal for linear
and compressed amplifier circuits. The transistor is available in a 2-lead
flange package.
PackaPgNe:TCyGpeHsV: 4404108202F3
Typical Performance Over 800 MHz - 1000 MHz (TC = 25˚C), 50 V
Parameter
800 MHz
850 MHz
900 MHz
Small Signal Gain
25.6
25.2
24.9
Gain @ Pin 34 dBm
20.4
20.8
20.3
Output Power @ Pin 34 dBm
275 302 279
EFF @ Pin 34 dBm
67 75
Note:
Measured CW in the CGHV40180F-AMP Application circuit.
73
950 MHz
24.4
20.1
257
73
1000 MHz
24.3
20.1
257
71
Units
dB
dB
W
%
FEATURES
APPLICATIONS
Up to 2000 MHz Operation
24 dB Small Signal Gain at 900 MHz
20 dB Power Gain at 900 MHz
250 W Typical Output Power at 900 MHz
75 % Efficiency at PSAT
• Military Communications
Public Safety VHF-UHF applications
• Radar
• Medical
Broadband Amplifiers
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV40180F Datasheet Preview

CGHV40180F Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature1
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
125
-10, +2
-65, +150
225
42
12.1
245
40
CGHV40180F Thermal Resistance, Junction to Case
Maximum dissipated power
RθJC
0.95
150
Case Operating Temperature3
TC -40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 See also, Power Derating Curve on Page 5.
Electrical Characteristics
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
PDISS = 150, 85˚C
PDISS = 150, 85˚C
Characteristics
DC Characteristics1 (TC = 25˚C)
Gate Threshold Voltage
Symbol
VGS(th)
Min.
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS 31.4
Drain-Source Breakdown Voltage
VBR 150
RF Characteristics2,3 (TC = 25˚C, F0 = 900 MHz unless otherwise noted)
Small Signal Gain
GSS 23.4
Power Gain
GP 19.3
Power Output at Saturation
Drain Efficiency4
POUT
η
53.7
64
Typ.
-3.0
-2.7
37.6
24.0
20.3
54.3
74
Max.
-2.3
Output Mismatch Stress
VSWR
3:1
Dynamic Characteristics
Input Capacitance
CGS 57.8
Output Capacitance
CDS 13.7
Feedback Capacitance
CGD 1.23
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measurements are to be performed using Cree production test fixture AD-838292F-TB
4 Drain Efficiency = POUT/PDC
Units
VDC
VDC
A
VDC
dB
dB
dBm
%
Y
pF
pF
pF
Conditions
VDS = 10 V, ID = 20.8 mA
VDS = 50 V, ID = 1000 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 41.8 mA
VDD = 50 V, IDQ = 1.0 A, Pin=10dBm CW
VDD = 50 V, IDQ = 1.0 A, Pin=34 dBm CW
VDD = 50 V, IDQ = 1.0 A, Pin=34 dBm CW
VDD = 50 V, IDQ = 1.0 A, Pin=34 dBm CW
No damage at all phase angles,
VDD = 50 V, IDQ = 1.0 A, POUT = 180 W CW
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV40180F Rev 1.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV40180F
Description GaN HEMT
Maker Cree
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