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CGHV40030 Datasheet, MACOM

CGHV40030 hemt equivalent, gan hemt.

CGHV40030 Avg. rating / M : 1.0 rating-11

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CGHV40030 Datasheet

Features and benefits


* Up to 6 GHz Operation
* 30 W Typical Output Power
* 16 dB Gain
* Application circuit for 0.96 - 1.4 GHz
* 70% Efficiency at PSAT
* 50 V Operatio.

Application

The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit .

Description

The CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L-, S- and C-Band amplifier application.

Image gallery

CGHV40030 Page 1 CGHV40030 Page 2 CGHV40030 Page 3

TAGS

CGHV40030
GaN
HEMT
MACOM

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