CGHV40180P
Description
The CGHV40180P is an unmatched, gallium nitride (Ga N) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. Ga N HEMTs offer high efficiency, high gain, and wide bandwidth capabilities making the CGHV40180P ideal for linear and pressed amplifier circuits. The transistor is available in a 2-lead pill package.
Package Types: 440206 PN’s: CGHV40180P
Features
- Up to 2.0 GHz operation
- 24 d B small signal gain at 900 MHz
- 20 d B power gain at 900 MHz
- 250 W typical output power at 900 MHz
- 75% efficiency at PSAT
Applications
- Military munications
- Public safety VHF-UHF applications
- Radar
- Medical
- Broadband amplifiers
Typical Performance Over 800 MHz
- 1000 MHz (TC = 25 °C), 50 V
Parameter Small Signal Gain Gain @ PIN 34 d Bm Output Power @ PIN 34 d Bm EFF @ PIN 34 d Bm
800 MHz 25.6 20.4 275 67
Note: Measured CW in the CGHV40180P-AMP...
