CGHV40180P hemt equivalent, 18w gan hemt.
* Up to 2.0 GHz operation
* 24 dB small signal gain at 900 MHz
* 20 dB power gain at 900 MHz
* 250 W typical output power at 900 MHz
* 75% efficiency .
GaN HEMTs offer high efficiency, high gain, and wide bandwidth capabilities making the CGHV40180P ideal for linear and .
The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer.
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