CGHV40100 Datasheet (Cree)

CGHV40100, GaN HEMT

CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40100 ideal for linear and compressed amplifier circuits.

The transistor is available in a 2-lead flange and pill package.

PPNa

CGHV40100 Features

* Up to 3 GHz Operation

* 100 W Typical Output Power

* 17.5 dB Small Signal Gain at 2.0 GHz

* Application Circuit for 0.5 - 2.5 GHz

* 55% Efficiency at PSAT

* 50 V Operation Large Signal Models Available for ADS & MWO Subject to change without