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CGHV40180F - GaN HEMT

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MACOM

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CGHV40180F GaN HEMT by MACOM - Datasheet Preview — Datasheet preview – CGHV40180F

Datasheet Details

Part number	CGHV40180F
Manufacturer	MACOM
File Size	1.19 MB
Description	GaN HEMT
Datasheet	CGHV40180F Datasheet
Additional preview pages of the CGHV40180F datasheet.

Product details

Description

The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Features

Up to 2.0 GHz Operation.
24 dB Small Signal Gain at 900 MHz.
20 dB Power Gain at 900 MHz.
250 W Typical Output Power at 900 MHz.
75% Efficiency at PSAT.

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Published: Dec 30, 2024 |