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CGHV40030 Datasheet Preview

CGHV40030 Datasheet

GaN HEMT

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CGHV40030
30 W, DC - 6 GHz, 50 V, GaN HEMT
Description
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT) designed specifically for high efficiency, high gain
and wide bandwidth capabilities. The device can be deployed for L, S and
C-Band amplifier applications. The datasheet specifications are based on a
0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while
housed in a 2-lead flange or pill package.
Typical Performance 0.96 - 1.4 GHz (TC = 25˚C), 50 V
Parameter
0.96 GHz
1.1 GHz
1.25 GHz
Gain @ PSAT
Saturated Output Power
15.6
29
15.8
30
Drain Efficiency @ PSAT
62
74
Note: Measured CW in the CGHV40030-AMP application circuit.
16.6
36
64
Package Types: 440166 and 440196
PN: CGHV40030
1.4 GHz
15.8
31
67
Units
dB
W
%
Features
Up to 6 GHz Operation
30 W Typical Output Power
16 dB Gain
Application circuit for 0.96 - 1.4 GHz
70%
50 V
Efficiency
Operation
at
PSAT
Listing of Available Hardware Application Circuits / Demonstration Circuits
Application Circuit
CGHV40030F-AMP
CGHV40030F-AMP2
Operating Frequency
0.96 - 1.4 GHz
0.5 - 2.7 GHz
Amplifier Class
Operating Voltage
50V
50V
Large Signal Models Available for ADS and MWO
Rev 1.3 - April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com




Cree

CGHV40030 Datasheet Preview

CGHV40030 Datasheet

GaN HEMT

No Preview Available !

CGHV40030
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Case Operating Temperature3
Thermal Resistance, Junction to Case4
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
TC
RθJC
150
-10, +2
-65, +150
225
5.2
4.2
245
-40, +85
5.9
Notes:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at wolfspeed.com/RF/Document-Library
3
4
PCWDISS
=
23.4
W
Units
Volts
Volts
˚C
˚C
mA
A
˚C
˚C
˚C/W
Notes
25˚C
25˚C
25˚C
25˚C
85˚C
2
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol Min. Typ. Max.
DC Characteristics1
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
Gate Quiescent Voltage
VGS(Q)
-2.6 –
Saturated Drain Current2
IDS 3.4 4.8 –
Drain-Source Breakdown Voltage V(BR)DSS
125
RF Characteristics3 (TC = 25˚C, F0 = 1.2 GHz unless otherwise noted)
Power Gain4
GP 15 16 -
Output Power4
POUT
30
35
Drain Efficiency4
η 62 65 -
Output Mismatch Stress4
VSWR
-
-
10 : 1
Dynamic Characteristics
Input Capacitance5
Output Capacitance5
Feedback Capacitance
CGS
CDS
CGD
7.4 –
2–
0.15 –
Notes:
1 Measured on wafer prior to packaging
2 Scaled from PCM data
3 Measured in CGHV40030-AMP
4
5
PInSAcTluisddeesfpinaecdkaagseIG
=
0.52
mA
Units Conditions
VDC VDS = 10 V, ID = 5.2 mA
VDC VDS = 50 V, ID = 150 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 5.2 mA
dB VDD = 50 V, IDQ = 150 mA, POUT = PSAT
W VDD = 50 V, IDQ = 150 mA, POUT = PSAT
% VDD = 50 V, IDQ = 150 mA, POUT = PSAT
Y
No damage at all phase angles,
VDD = 50 V, IDQ = 150 mA, POUT = 30 W CW
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Rev 1.3 - April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com


Part Number CGHV40030
Description GaN HEMT
Maker Cree
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CGHV40030 Datasheet PDF






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