CGHV40030 hemt equivalent, gan hemt.
* Up to 6 GHz Operation
* 30 W Typical Output Power
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16 dB Gain Application circuit for 0.96 - 1.4 GHz
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70% 50 V
Efficiency Ope.
The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit .
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applicatio.
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