CGHV40030
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Case Operating Temperature3
Thermal Resistance, Junction to Case4
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
TC
RθJC
150
-10, +2
-65, +150
225
5.2
4.2
245
-40, +85
5.9
Notes:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at wolfspeed.com/RF/Document-Library
3
4
PCWDISS
=
23.4
W
Units
Volts
Volts
˚C
˚C
mA
A
˚C
˚C
˚C/W
Notes
25˚C
25˚C
25˚C
25˚C
85˚C
2
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol Min. Typ. Max.
DC Characteristics1
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
Gate Quiescent Voltage
VGS(Q)
–
-2.6 –
Saturated Drain Current2
IDS 3.4 4.8 –
Drain-Source Breakdown Voltage V(BR)DSS
125
–
–
RF Characteristics3 (TC = 25˚C, F0 = 1.2 GHz unless otherwise noted)
Power Gain4
GP 15 16 -
Output Power4
POUT
30
35
–
Drain Efficiency4
η 62 65 -
Output Mismatch Stress4
VSWR
-
-
10 : 1
Dynamic Characteristics
Input Capacitance5
Output Capacitance5
Feedback Capacitance
CGS
CDS
CGD
–
–
–
7.4 –
2–
0.15 –
Notes:
1 Measured on wafer prior to packaging
2 Scaled from PCM data
3 Measured in CGHV40030-AMP
4
5
PInSAcTluisddeesfpinaecdkaagseIG
=
0.52
mA
Units Conditions
VDC VDS = 10 V, ID = 5.2 mA
VDC VDS = 50 V, ID = 150 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 5.2 mA
dB VDD = 50 V, IDQ = 150 mA, POUT = PSAT
W VDD = 50 V, IDQ = 150 mA, POUT = PSAT
% VDD = 50 V, IDQ = 150 mA, POUT = PSAT
Y
No damage at all phase angles,
VDD = 50 V, IDQ = 150 mA, POUT = 30 W CW
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Rev 1.3 - April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
