CGHV40030 Datasheet - Cree

CGHV40030 GaN HEMT

Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. The datasheet specifications are based on a 0..

CGHV40030 Features

* Up to 6 GHz Operation

* 30 W Typical Output Power

* 16 dB Gain Application circuit for 0.96 - 1.4 GHz

* 70% 50 V Efficiency Operation at PSAT Listing of Available Hardware Application Circuits / Demonstration Circuits Application

CGHV40030-Cree.pdf