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CGHV40100 - 100W GaN HEMT

Description

The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Features

  • Up to 3 GHz Operation.
  • 100 W Typical Output Power.
  • 17.5 dB Small Signal Gain at 2.0 GHz.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40100 ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange and pill package. Features • Up to 3 GHz Operation • 100 W Typical Output Power • 17.5 dB Small Signal Gain at 2.0 GHz • Application Circuit for 0.5 - 2.5 GHz • 55% Efficiency at PSAT • 50 V Operation Package Types: 440193 & 440206 PN: CGHV40100F & CGHV40100P Typical Performance Over 500 MHz - 2.
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