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CGHV40100 Datasheet, MACOM

CGHV40100 hemt equivalent, 100w gan hemt.

CGHV40100 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 1.04MB)

CGHV40100 Datasheet
CGHV40100
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 1.04MB)

CGHV40100 Datasheet

Features and benefits


* Up to 3 GHz Operation
* 100 W Typical Output Power
* 17.5 dB Small Signal Gain at 2.0 GHz
* Application Circuit for 0.5 - 2.5 GHz
* 55% Efficiency a.

Application

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40100 ideal for linear and co.

Description

The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer h.

Image gallery

CGHV40100 Page 1 CGHV40100 Page 2 CGHV40100 Page 3

TAGS

CGHV40100
100W
GaN
HEMT
MACOM

Manufacturer


MACOM

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