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Comset Semiconductor

2N5320 Datasheet Preview

2N5320 Datasheet

(2N5320 / 2N5321) Silicon Planar Epitaxial Transistors

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NPN 2N5320 – 2N5321
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N5320 and 2N5321 are NPN transistors mounted in TO-39 metal case .
They are especially intended for high-voltage medium power applications in industrial and
commercial equipements.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VCEV
VEBO
IC
IB
PD
TJ
TStg
Collector-Emitter Voltage (IB = 0)
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (VBE = 1.5V) www.DataSheet.net/
Emitter-Base Voltage (IC = 0)
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
@ Tamb = 25°
@ Tcase= 25°
Storage Temperature range
Value
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
75
50
100
75
100
75
6
5
2
1
1
10
-65 to +200
-65 to +200
Unit
V
V
V
V
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
RthJ-c
Thermal Resistance, Junction to ambient
Thermal Resistance, Junction to case
Value
175
17.5
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/




Comset Semiconductor

2N5320 Datasheet Preview

2N5320 Datasheet

(2N5320 / 2N5321) Silicon Planar Epitaxial Transistors

No Preview Available !

NPN 2N5320 – 2N5321
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICBO
IEBO
VCEO
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter
Breakdown Voltage
VCB = 80 V, IE =0
VCB = 60 V, IE =0
VEB = 5 V, IC =0
VEB = 4 V, IC =0
IC = 10 mA, IB =0
VCEV
Collector Emitter
Breakdown Voltage
IC = 100 µA
VBE = 1.5V
VEBO
Emitter Base Breakdown
Voltage
IE = 100 µA, IC =0
hFE (*) DC Current Gain
VCE(SAT)
(*)
Collector-Emitter
saturation Voltage
IC = 500 mA
VCE = 4 V
IC = 1 A
VCE = 2 V
IC = 500 mAwww.DataSheet.net/
IB = 50 mA
VBE (*)
fT
Base-Emitter Voltage
Transition frequency
IC = 500 mA
VCE = 4 V
IC = 50 mA
VCE = 4 V
f = 10 MHz
IC = 500 mA
ton Turn-on Time
VCC = 30 V
IB1 = 50 mA
IC = 500 mA
toff Turn-off Time
VCC = 30 V
IB1 = -IB2 = 50 mA
(*) Pulse conditions : tp < 300 µs, δ =1%
2N5320
2N5321
-
-
-
-
0.5
5
µA
2N5320
2N5321
-
-
0.1
0.5
-
-
µA
2N5320 75
2N5321 50
-
-
-
-
V
2N5320 100
2N5321 75
-
-
-
-
V
2N5320
2N5321
6
5
-
-
-
-
V
2N5320 30 - 130
2N5321 40
- 250 -
2N5320 10 -
-
2N5320
2N5321
2N5320
2N5321
-
-
-
-
-
-
0.5
0.8
V
-
-
1.1
1.4
V
2N5320
50
2N5321
-
- MHz
2N5320
2N5321
2N5320
2N5321
-
-
- 80 ns
- 800 ns
COMSET SEMICONDUCTORS
2/3
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number 2N5320
Description (2N5320 / 2N5321) Silicon Planar Epitaxial Transistors
Maker Comset Semiconductor
PDF Download

2N5320 Datasheet PDF






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