900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






TT

2N5320 Datasheet Preview

2N5320 Datasheet

SILICON PLANAR EPITAXIAL NPN TRANSISTOR

No Preview Available !

SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N5320
Low VCE(sat), hFE 30-130 (@VCE=4V, IC=0.5A)
Hermetic TO-39 Metal package.
Ideally Suited For Medium Power Amplifier And
Switching Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
100V
VCEO
Collector – Emitter Voltage
75V
VEBO
Emitter – Base Voltage
7V
IC Continuous Collector Current
2A
IB Base Current
1.0A
PD Total Power Dissipation at TA = 25°C
1.0W
Derate Above 25°C
5.71mW/°C
PD Total Power Dissipation at TC = 25°C
7W
Derate Above 25°C
40mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max. Units
175 °C/W
25 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8582
Issue 1
Page 1 of 3




TT

2N5320 Datasheet Preview

2N5320 Datasheet

SILICON PLANAR EPITAXIAL NPN TRANSISTOR

No Preview Available !

SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N5320
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
Collector-Emitter
Breakdown Voltage
IC = 10mA
VCE = 100V
IB = 0
VBE = -1.5V
ICEX
Collector Cut-Off Current
VCE = 70V
VBE = -1.5V
TA = 150°C
IEBO
Emitter Cut-Off Current
VEB = 7V
IC = 0
hFE(1)
VCE(sat)(1)
VBE(on) (1)
Forward-current transfer
ratio
Collector-Emitter Saturation
Voltage
Base-Emitter Voltage
IC = 500mA
IC = 1.0A
IC = 500mA
IC = 500mA
VCE = 4V
VCE = 2V
IB = 50mA
VCE = 4V
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forward-current
transfer ratio
ton Turn-On Time
toff Turn-Off Time
IC = 50mA
VCE = 4V
f = 10MHz
IC = 500mA
VCC = 30V
IB1 = 50mA
IC = 500mA
VCC = 30V
IB1 = - IB2 = 50mA
Notes
(1) Pulse Width 300us, δ ≤ 2%
Min. Typ Max. Units
75 V
100 µA
5 mA
100 µA
30 130
10
0.5
V
1.1
5
80
ns
800
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8582
Issue 1
Page 2 of 3


Part Number 2N5320
Description SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Maker TT
PDF Download

2N5320 Datasheet PDF






Similar Datasheet

1 2N5320 SMALL SIGNAL NPN TRANSISTORS
STMicroelectronics
2 2N5320 10 Watt NPN-PNP Silicon Transistor
Fairchild Semiconductor
3 2N5320 Silicon Power Switching Transistor
Solid State
4 2N5320 NON Switching Transistor
NES
5 2N5320 Medium Power Transistors
Multicomp
6 2N5320 COMPLEMENTARY SILICON SWITCHING TRANSISTORS
Central Semiconductor
7 2N5320 SILICON PLANAR EPITAXIAL NPN TRANSISTOR
TT
8 2N5320 (2N5320 / 2N5321) Silicon Planar Epitaxial Transistors
Comset Semiconductor
9 2N5320 SILICON POWER SWITCHING TRANSISTORS
CDIL





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy