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Central Semiconductor

2N5320 Datasheet Preview

2N5320 Datasheet

COMPLEMENTARY SILICON SWITCHING TRANSISTORS

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2N5320 2N5321 NPN
2N5322 2N5323 PNP
COMPLEMENTARY SILICON
SWITCHING TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5320, 2N5322
series types are complementary silicon power
transistors manufactured by the epitaxial planar process,
designed for amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEV
VCEO
VEBO
IC
IB
PD
TJ, Tstg
ΘJA
ΘJC
2N5320
2N5322
100
2N5321
2N5323
75
100 75
75 50
6.0 5.0
2.0
1.0
10
-65 to +200
175
17.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N5320
2N5322
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=80V
- 0.5
ICBO
VCB=60V
--
IEBO
VEB=5.0V
- 0.1
IEBO
VEB=4.0V
--
BVCEV
IC=100μA, VBE=1.5V
100 -
BVCEO
IC=10mA
75 -
BVEBO
IE=100μA
6.0 -
VCE(SAT) IC=500mA, IB=50mA (2N5320)
- 0.5
VCE(SAT) IC=500mA, IB=50mA (2N5321)
--
VCE(SAT) IC=500mA, IB=50mA (2N5322)
- 0.7
VCE(SAT) IC=500mA, IB=50mA (2N5323)
--
VBE(ON)
VCE=4.0V, IC=500mA
- 1.1
hFE VCE=4.0V, IC=500mA
30 175
hFE VCE=2.0V, IC=1.0A
10 -
fT
VCE=4.0V, IC=50mA, f=10MHz
50 -
2N5321
2N5323
MIN MAX
--
- 5.0
--
- 0.5
75 -
50 -
5.0 -
--
- 0.8
--
- 1.2
- 1.4
40 250
--
50 -
UNITS
V
V
V
V
A
A
W
°C
°C/W
°C/W
UNITS
μA
μA
μA
μA
V
V
V
V
V
V
V
V
MHz
R5 (11-May 2017)




Central Semiconductor

2N5320 Datasheet Preview

2N5320 Datasheet

COMPLEMENTARY SILICON SWITCHING TRANSISTORS

No Preview Available !

2N5320 2N5321 NPN
2N5322 2N5323 PNP
COMPLEMENTARY SILICON
SWITCHING TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MAX
ton VCC=30V, IC=500mA, IB1=50mA (2N5320, 2N5321)
80
ton VCC=30V, IC=500mA, IB1=50mA (2N5322, 2N5323)
100
toff VCC=30V, IC=500mA, IB1=IB2=50mA (2N5320, 2N5321)
800
toff VCC=30V, IC=500mA, IB1=IB2=50mA (2N5322, 2N5323)
1.0
UNITS
ns
ns
ns
μs
TO-39 CASE - MECHANICAL OUTLINE
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R5 (11-May 2017)


Part Number 2N5320
Description COMPLEMENTARY SILICON SWITCHING TRANSISTORS
Maker Central Semiconductor
PDF Download

2N5320 Datasheet PDF






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