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2N5320 Datasheet Preview

2N5320 Datasheet

SILICON POWER SWITCHING TRANSISTORS

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON POWER SWITCHING TRANSISTORS
2N5320, 2N5321 NPN
2N5322, 2N5323 PNP
TO-39
Metal Can Package
Medium Power Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Base Current
Power Dissipation@ Ta=25ºC
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
IB
PD
PD
Tj, Tstg
2N5320
75
100
7
2N5321
2N5322
50 75
75 100
57
2.0
1.0
1
5.71
10
57.14
- 65 to +200
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
Rth (j-a)
Rth (j-c)
175
17.5
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=100mA, IB=0
2N5320/5322
2N5321/5323
Collector Cut Off Current
ICEX VCE=70V, VBE=1.5V, Tc=150ºC
2N5320/5322
VCE=45V, VBE=1.5V, Tc=150ºC
2N5321/5323
VCE=100V, VBE=1.5V
2N5320/5322
Emitter Cut Off Current
VCE=75V, VBE=1.5V
2N5321/5323
IEBO VBE=5V, IC=0
2N5321/5323
VBE=7V, IC=0
2N5320/5322
MIN
75
50
2N5323
50
75
5
UNITS
V
V
V
A
A
W
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
MAX
5
UNITS
V
V
mA
5 mA
100 µA
100 µA
100 µA
100 µA
Continental Device India Limited
Data Sheet
Page 1 of 4




CDIL

2N5320 Datasheet Preview

2N5320 Datasheet

SILICON POWER SWITCHING TRANSISTORS

No Preview Available !

SILICON POWER SWITCHING TRANSISTORS
2N5320, 2N5321 NPN
2N5322, 2N5323 PNP
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
DC Current Gain
*hFE
IC=1A, VCE=2V
2N5320/5322
Collector Emitter Saturation Voltage *VCE (sat)
Base Emitter On Voltage
*VBE (on)
IC=0.5A, VCE=4V
2N5320/5322
2N5321/5323
IC=500mA, IB=50mA
2N5320
2N5321
2N5322
2N5323
IC=500mA, VCE=4V
2N5320/5322
2N5321/5323
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
hfe IC=50mA,VCE=4V, f=10MHz
SWITCHING CHARACTERISTICS
Turn On time
Turn Off time
ton VCC=30V, IC=500mA, IB1=50mA
2N5320/5321
2N5322/5323
toff VCC=30V, IC=500mA, IB1=IB2=50mA
2N5320/5321
2N5322/5323
*Pulsed: Pulse width <300µs, duty cycle <2%
MIN TYP MAX UNITS
10
30 130
40 250
0.5 V
0.8 V
0.7 V
1.2 V
1.1 V
1.4 V
5
80
100
800
1000
ns
ns
ns
ns
Continental Device India Limited
Data Sheet
Page 2 of 4


Part Number 2N5320
Description SILICON POWER SWITCHING TRANSISTORS
Maker CDIL
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