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2N5320 Datasheet

SMALL SIGNAL NPN TRANSISTORS

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2N5320
2N5321
SMALL SIGNAL NPN TRANSISTORS
s SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
s MEDIUM POWER AMPLIFIER
s PNP COMPLEMENTS ARE 2N5322 AND
2N5323
DESCRIPTION
The 2N5320 and 2N5321 are silicon epitaxial
planar NPN transistors in Jedec TO-39 metal
case. They are especially intended for
high-voltage medium power application in
industrial and commercial equipments.
The complementary PNP types are respectively
the 2N5322 and 2N5323
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO
VCEV
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
Tstg, Tj
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (VBE = 1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at Tamb = 25 oC
Total Dissipation at Tc = 25 oC
Storage and Junction Temperature
June 1997
Value
2N5320
2N5321
100 75
100 75
75 50
65
1.2
2
1
1
10
-65 to 200
Unit
V
V
V
V
A
A
A
W
W
oC
1/4


STMicroelectronics Electronic Components Datasheet

2N5320 Datasheet

SMALL SIGNAL NPN TRANSISTORS

No Preview Available !

2N5320/2N5321
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
17.5
175
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 80 V
VCB = 60 V
for 2N5320
for 2N5321
IEBO
Collector Cut-off
Current (IC = 0)
VEB = 5 V
VEB = 4 V
for 2N5320
for 2N5321
V(BR)CEV
Collector-Emitter
Breakdown Voltage
(VBE = 1.5V)
IC = 100 µA
for 2N5320
for 2N5321
V(BR)CEOCollector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
for 2N5320
for 2N5321
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100 µA
for 2N5320
for 2N5321
VCE(sat)Collector-Emitter
Saturation Voltage
IC = 500 mA
for 2N5320
for 2N5321
IB = 50 mA
VBE
Base-Emitter Voltage
IC = 500 mA
for 2N5320
for 2N5321
VCE = 4 V
hFEDC Current Gain
for 2N5320
IC = 500 mA
IC = 1 A
for 2N5321
IC = 500 mA
VCE = 4 V
VCE = 2 V
VCE = 4 V
fT Transition Frequency IC = 50 mA VCE = 4 V f = 10 MHz
ton Turn-on Time
IC = 500 mA VCC = 30 V
IB1 = 50 mA
toff Turn-off Time
IC = 500 mA VCC = 30 V
IB1 = -IB2 = 50 mA
Pulsed: Pulse duration = 300 µs, duty cycle = 1 %
Min.
100
75
75
50
6
5
30
10
40
50
Typ.
0.1
0.5
Max.
0.5
5
0.5
0.8
1.1
1.4
130
250
80
800
Unit
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
MHz
ns
ns
2/4


Part Number 2N5320
Description SMALL SIGNAL NPN TRANSISTORS
Maker STMicroelectronics
PDF Download

2N5320 Datasheet PDF






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