2N5320 Datasheet | STMicroelectronics

DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and mercial equipments. The plementary PNP types are respectively the 2N5322 and 2N5323 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEV V CEO V EBO IC I CM IB P tot P tot T stg , T j Parameter 2N5320 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = 1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T amb = 25 C Total Dissipation at T c = 25 o C Storage and Junction Temperature o Value 2N5321 75 75 50 5 1.2 2 1 1 10 -65 to 200 100 100 75 6 Unit V V V V A A A W W o June 1997 1/4 2N5320/2N5321 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 17.5 175 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CBO I EBO V (BR)CEV Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I C = 0) Collector-Emitter Breakdown Voltage (V BE = 1.5V) Test Conditions V CB = 80 V V CB = 60 V V EB = 5 V V EB = 4 V I C = 100 µ A for 2N5320 for 2N5321 I C = 10 m A for 2N5320 for 2N5321 I E = 100 µ A for 2N5320 for 2N5321 I C = 500 m A for 2N5320 for 2N5321 I C = 500 m A for 2N5320 for 2N5321 for 2N5320 I C = 500 m A IC = 1 A for 2N5321 I C = 500 m A I C = 50 m A I C = 500 m A I B1 = 50 m A I B = 50 m A 0.5 0.8 V CE = 4 V 1.1 1.4 VCE = 4 V V CE = 2 V V CE = 4 V V CE = 4 V V CC = 30 V f = 10 MHz 30 10 40 50 80 800 130 V V V V for 2N5320 for 2N5321 for 2N5320 for 2N5321 100 75 75 50 6 5 0.1 0.5 Min. Typ. Max. 0.5 5 Unit µA µA µA µA V V V V V V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Voltage V CE(sat) ∗ V BE ∗ h FE ∗ DC...