CTH3904NS-T52 datasheet, mosfet equivalent, CT Micro

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datasheet Download (Size : 1.03MB)

Features and benefits

* Drain-Source Breakdown Voltage VDSS 40V
* Drain-Source On-Resistance RDS(ON) 9m, at VGS= 10V, ID= 15A RDS(ON) 13m, at VGS= 4.5V, ID= 13A
* Continuous Drai.

Application

* Power Management
* DC/DC Converter
* LCD TV & Monitor Display inverter
* CCFL inverter Package Outlin.

Description

The CTH3904NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are.

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