* Drain-Source Breakdown Voltage VDSS 30V
* Drain-Source On-Resistance RDS(ON) 2.6m, at VGS= 10V, ID= 20A RDS(ON) 3.3m, at VGS= 4.5V, ID= 20A
* Continuous D.

* DC/DC converters
* Motor Drivers
* Power Management Package Outline Schematic Drain Gate Source Drai.

The CTH1003NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance Applications
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