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CTH1606NS-T52 Datasheet, CT Micro

CTH1606NS-T52 mosfet equivalent, n-channel mosfet.

CTH1606NS-T52 Avg. rating / M : 1.0 rating-11

datasheet Download (1.19MB)

CTH1606NS-T52 Datasheet

Features and benefits


* Drain-Source Breakdown Voltage VDSS 60V
* Drain-Source On-Resistance RDS(ON) 52m, at VGS= 10V, ID= 15A RDS(ON) 70m, at VGS= 4.5V, ID= 10A
* Continuous Dra.

Application


* DC/DC Converter
* Load Switch
* LCD Display inverter
* Power Management
* Package Outline Schemat.

Description

The CTH1606NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are.

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CTH1606NS-T52 Page 1 CTH1606NS-T52 Page 2 CTH1606NS-T52 Page 3

TAGS

CTH1606NS-T52
N-Channel
MOSFET
CTH10003NS-T52
CTH11055NS
CTH1706PS-T52
CT Micro

Manufacturer


CT Micro
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