CTH11055NS datasheet, mosfet equivalent, CT Micro

Features and benefits

* Drain-Source Breakdown Voltage VDSS 55V
* Drain-Source On-Resistance RDS(ON) 8m, at VGS= 10, ID= 59A
* Continuous Drain Current at TC=25℃ID =110A
* Adv.

Application

* Switching Applications
* Motor Drivers
* Relay Drivers Package Outline Schematic Pin 1 CT Micro Proprie.

Description

These Power MOSFETs utilizes Advanced Trench Process Technology which comes with High Density Cell Design for Ultra Low RDS(ON). The device exhibits rugged avalanche characteristics and guaranteed to withstand a stipulated level of energy in the brea.

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