CTH1706PS-T52 mosfet equivalent, p-channel mosfet.
* Drain-Source Breakdown Voltage VDSS-60V
* Drain-Source On-Resistance
RDS(ON) 65m, at VGS= -10V, ID= -20A RDS(ON) 80m, at VGS= -4.5V, ID= -16A
* Continuous.
* Switching Applications
* DC/DC Converter
* IPC
Package Outline
Schematic
Drain
Gate
Source
Drain Gat.
The CTH1706PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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