CTH1804PS-T52 datasheet, mosfet equivalent, CT Micro

Features and benefits

* Drain-Source Breakdown Voltage VDSS-40V
* Drain-Source On-Resistance RDS(ON) 35m, at VGS= -10V, ID= -12A RDS(ON) 57m, at VGS= -4.5V, ID= -6A
* Continuous .

Application

* Load Switch
* DC/DC Converter
* LCD Display inverter Package Outline Schematic Drain Gate Source Dra.

Description

The CTH1804PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications

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