BLC10M6XS200 transistor equivalent, power ldmos transistor.
* High efficiency
* Easy power control
* Excellent ruggedness
* Excellent thermal resistance due to copper flange
* Integrated ESD protection
* De.
at frequencies from 425 MHz to 450 MHz.
The BLC10M6XS200 is designed for high-power CW applications and is assembled in.
200 W LDMOS power transistor for RF lighting applications at frequencies from 425 MHz to 450 MHz.
The BLC10M6XS200 is designed for high-power CW applications and is assembled in a high performance plastic package.
Table 1. Typical performance RF pe.
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