BLC10G18XS-552AVT transistor equivalent, power ldmos transistor.
* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Lower output capacitance for improved performanc.
at frequencies from 1805 MHz to 1880 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an as.
550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit. VDS = 30 V.
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